tp0202k vishay siliconix document number: 71609 s-03590?rev. c, 31-mar-03 www.vishay.com 11-1 p-channel 30-v (d-s) mosfet product summary v (br)dss(min) (v) r ds(on) ( ) v gs(th) (v) i d (ma) 30 1.4 @ v gs = -10 v - 1.3 to - 3.0 -385 -30 3.5 @ v gs = -4.5 v - 1.3 to - 3.0 -240 features benefits applications high-side switching low on-resistance: 1.2 ? (typ) low threshold: - 2.0 v (typ) fast swtiching speed: 14 ns (typ) low input capacitance: 31 pf (typ) gate-source esd protection ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits easily driven without buffer drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems power supply converter circuits solid state relays to-236 (sot-23) top view 2 1 s d g 3 marking code: 2k wll 2k = part number code for tp0202k w = week code ll = lot traceability absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d -385 continuous drain current (t j = 150 c) a t a = 85 c i d -280 ma pulse drain current b i dm -750 power dissipation a t a = 25 c p d 350 mw power dissipation a t a = 85 c p d 185 mw maximum junction-to-ambient a r thja 350 c/w operating junction and storage temperature range t j , t stg - 55 to 150 c notes a. surface mounted on fr4 board. b. pulse width limited by maximum junction temperature.
tp0202k vishay siliconix www.vishay.com 11-2 document number: 71609 s-03590?rev. c, 31-mar-03 specifications (t a = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 100 a -30 -38 v gate-threshold v oltage v gs(th) v ds = v gs , i d = - 250 a -1.3 -2 -3.0 v gate body leakage i gss v ds = 0 v, v gs = 5 v 50 gate-body leakage i gss v ds = 0 v, v gs = 10 v 300 na zero gate voltage drain current i dss v ds = -24 v, v gs = 0 v -100 zero gate voltage drain current i dss v ds = -24 v, v gs = 0 v, t j = 85 c -10 a on-state drain current a i d(on) v ds = -10 v, v gs = -10 v -500 ma drain source on resistance a r ds( ) v gs = -4.5 v, i d = - 50 ma 2.1 3.5 forward t ransconductance a g fs v ds = -5 v, i d = - 200 ma 315 ms diode forward voltage a v sd i s = -250 ma, v gs = 0 v -1.2 v dynamic total gate charge q g 175 gate-source charge q gs v ds = -16 v, v gs = -10 v, i d - 200 ma 225 pc gate-drain charge q gd ds gs d 1000 p input capacitance c iss 31 output capacitance c oss v ds = -15 v, v gs = 0 v, f = 1 mhz 11 pf reverse transfer capacitance c rss ds gs 4 p switching b turn on time t d(on) 9 turn-on time t r v dd = -15 v, r l = 75 6 ns turn off time t d(off) v dd = -15 v , r l = 75 - 200 ma, v gen = -10 v, r g = 6 30 ns turn-off time t f 20 notes a. pulse test: pw 300 ms duty cycle 2%. b. switching time is essentially independent of operating temperature.
tp0202k vishay siliconix document number: 71609 s-03590?rev. c, 31-mar-03 www.vishay.com 11-3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 12 14 16 0 200 400 600 800 1000 1200 1400 1600 i d = 200 ma gate charge - gate-to-source voltage (v) q g - total gate charge (pc) v gs v ds = 10 v v ds = 16 v 0 10 20 30 40 50 0 4 8 12 16 20 capacitance v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss c iss v gs = 0 v f = 1 mhz 0 200 400 600 800 1000 1200 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 012345 output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 v 3.5 v 3 v v gs - gate-to-source voltage (v) - drain current (ma) i d t j = -55 c 125 c 25 c 0 4 8 12 16 20 0 4 8 12 16 20 on-resistance vs. gate-source voltage v gs - gate -to-source voltage (v) v gs = 4.5 v v gs = 10 v - on-resistance ( r ds(on) ) 4.5 v 6 v 8 v 7 v 5.5 v 5 v 4 v 0 2 4 6 8 10 12 14 0 200 400 600 800 1000 on-resistance vs. drain current i d - drain current (ma) v gs = 4.5 v v gs = 10 v - on-resistance ( r ds(on) ) for the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
tp0202k vishay siliconix www.vishay.com 11-4 document number: 71609 s-03590?rev. c, 31-mar-03 typical characteristics (25 c unless noted) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 350 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s 10 t j = -55 c v gs = 0 v threshold voltage variance over temperature variance (v) v gs(th) -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 i d = 250 a t j - junction temperature ( c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 on-resistance vs. junction temperature t j - junction temperature ( c) v gs = 10 v @ 200 ma v gs = 4.5 v @ 50 ma (normalized) - on-resistance ( r ds(on) ) - (na) i gss t j - junction temperature ( c) i gss vs. temperature 125 150 1 100 1000 25 50 75 100 10 v gs = 10 v v gs = 5 v for the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
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